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High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation

Identifieur interne : 000051 ( Main/Exploration ); précédent : 000050; suivant : 000052

High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation

Auteurs : RBID : ISTEX:11664_1996_Article_BF02666502.pdf

English descriptors

KwdEn :
- Electron mobility, Heterojunction field effect transistor (HJFET), InALAs, InAs, InGaAs, Pseudomorphic structure.

Abstract

The highest electron mobility yet reported for an InP-based pseudomorphic structure at room temperature, 18300 cm2/V·s, has been obtained by using a structure with an indium composition modulated channel, namely, In0.53Ga0.47As/ In0.8Ga0.2As/InAs/In0.8Ga0.2As/In0.53Ga0.47As. Although the total thickness of the high In-content layers (In0.8Ga0.2As/InAs/In0.8Ga0.2As) exceeds the critical thick-ness predicted by Matthews theory, In0.8Ga0.2As insertion makes it possible to form smooth In0.53Ga0.47As/In0.8Ga0.2As and In0.8Ga0.2As/InAs heterointerfaces. This structure can successfully enhance carrier confinement in the high In-content layers. This superior carrier confinement can be expected to lead to the highest yet reported electron mobility.

DOI: 10.1007/BF02666502

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<author><name>H. Miyamoto</name>
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<author><name>N. Samoto</name>
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<front><div type="abstract" xml:lang="eng">The highest electron mobility yet reported for an InP-based pseudomorphic structure at room temperature, 18300 cm2/V·s, has been obtained by using a structure with an indium composition modulated channel, namely, In0.53Ga0.47As/ In0.8Ga0.2As/InAs/In0.8Ga0.2As/In0.53Ga0.47As. Although the total thickness of the high In-content layers (In0.8Ga0.2As/InAs/In0.8Ga0.2As) exceeds the critical thick-ness predicted by Matthews theory, In0.8Ga0.2As insertion makes it possible to form smooth In0.53Ga0.47As/In0.8Ga0.2As and In0.8Ga0.2As/InAs heterointerfaces. This structure can successfully enhance carrier confinement in the high In-content layers. This superior carrier confinement can be expected to lead to the highest yet reported electron mobility.</div>
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<abstract lang="eng">The highest electron mobility yet reported for an InP-based pseudomorphic structure at room temperature, 18300 cm2/V·s, has been obtained by using a structure with an indium composition modulated channel, namely, In0.53Ga0.47As/ In0.8Ga0.2As/InAs/In0.8Ga0.2As/In0.53Ga0.47As. Although the total thickness of the high In-content layers (In0.8Ga0.2As/InAs/In0.8Ga0.2As) exceeds the critical thick-ness predicted by Matthews theory, In0.8Ga0.2As insertion makes it possible to form smooth In0.53Ga0.47As/In0.8Ga0.2As and In0.8Ga0.2As/InAs heterointerfaces. This structure can successfully enhance carrier confinement in the high In-content layers. This superior carrier confinement can be expected to lead to the highest yet reported electron mobility.</abstract>
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<topic>pseudomorphic structure</topic>
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High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation

High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri